Laser annealing offers high activation and lower thermal budget capability that is ideal for ultra-shallow junction formation. The key challenge for such ultra-fast annealing is how to minimize within die temperature variations due to pattern density effects arising from non-uniform optical absorption and inhomogeneous thermal properties. These effects exist in conventional lamp-based RTA, but their magnitudes are exacerbated due to reduced thermal diffusion length.
In this talk, Dr. Wang will review both the melt and non-melt laser annealing technologies and discuss approaches they use to minimize the pattern density effects. Applications to the advanced CMOS fabrication will also be discussed.